IRL2203S Datasheet - International Rectifier

Power MOSFET

IRL2203S Features

* 185) 4.20 (.165) -B1.32 ( .052) 1.22 ( .048) 10.16 (.400) RE F . 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 ( .208) 4.78 ( .188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) 1 3 3X 1.40 (.055) 1.14 (.045) 5.08 (.200) 0.93 (.037) 3X 0.

IRL2203S General Description

D VDSS = 30V RDS(on) = 0.007Ω G ID = 100A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power .

IRL2203S Datasheet (173.02 KB)

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IRL2203S

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International Rectifier

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173.02 KB

Description:

Power mosfet.
PRELIMINARY PD 9.1091A IRL2203S HEXFET® Power MOSFET l Logic-Level Gate Drive l Surface Mount l Advanced Process Technology l Dynamic dv/dt Rating .

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IRL2203S Power MOSFET International Rectifier

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IRL2203S Features

IRL2203S General Description

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