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Intersil Electronic Components Datasheet

FSL110R Datasheet

3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs

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Data Sheet
FSL110D, FSL110R
October 1998 File Number 4224.3
3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR
Resistant, N-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space
environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K Commercial FSL110D1
10K TXV
FSL110D3
100K
Commercial
FSL110R1
100K
TXV
FSL110R3
100K
Space
FSL110R4
Formerly available as type TA17616.
Features
• 3.5A, 100V, rDS(ON) = 0.600
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 0.3nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
Symbol
D
G
S
Package
TO-205AF
G
DS
4-1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

FSL110R Datasheet

3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs

No Preview Available !

FSL110D, FSL110R
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
FSL110D, FSL110R
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100
100
3.5
2.5
10.5
±20
15
6
0.12
V
V
A
A
A
V
W
W
W/ oC
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .IAS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
10.5
3.5
10.5
-55 to 150
300
A
A
A
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On-State Voltage
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate Charge at 12V
Threshold Gate Charge
Gate Charge Source
Gate Charge Drain
Plateau Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
VDS(ON)
rDS(ON)12
td(ON)
tr
td(OFF)
tf
Qg (TOT)
Qg (12)
Qg (TH)
Qgs
Qgd
V(PLATEAU)
CISS
COSS
CRSS
RθJC
RθJA
ID = 1mA, VGS = 0V
VGS = VDS,
ID = 1mA
VDS = 80V,
VGS = 0V
VGS = ±20V
TC = -55oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
VGS = 12V, ID = 3.5A
ID = 2.5A,
TC = 25oC
VGS = 12V
TC = 125oC
VDD = 50V, ID = 3.5A,
RL = 14.3, VGS 12V,
RGS = 7.5
VGS = 0V to 20V
VGS = 0V to 12V
VGS = 0V to 2V
VDD = 50V,
ID = 3.5A
ID = 3.5A, VDS = 15V
VDS = 25V, VGS = 0V,
f = 1MHz
4-2
MIN TYP MAX UNITS
100 - - V
- - 5.0 V
1.5 - 4.0 V
0.5 - - V
- - 25 µA
- - 250 µA
- - 100 nA
- 200 nA
- 2.21 V
-
0.520 0.600
-
-
0.960
- - 30 ns
- - 60 ns
- - 30 ns
- - 55 ns
- - 15 nC
- 7.6 8.5 nC
- - 0.62 nC
- 2.2 2.8 nC
- 4.3 4.9 nC
-8-V
- 155 -
pF
- 70 - pF
- 20 - pF
- - 8.3 oC/W
- - 175 oC/W


Part Number FSL110R
Description 3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
Maker Intersil Corporation
Total Page 8 Pages
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Similar Datasheet

1 FSL110D 3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
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2 FSL110R 3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
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