of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower o.

operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power su.

The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3 and HGT1S15N120C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state.

HGTP15N40C1

HGTP15N40E1

HGTP15N50C1

HGTP15N50E1

HGTP10N120BN

HGTP10N40C1

HGTP10N40C1D

HGTP10N40E1

HGTP10N40E1D

HGTP10N40F1D

HGTP10N50C1

HGTP10N50C1D

HGTP10N50E1