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IRF322 - N-Channel Power MOSFET

Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Features

  • 2.8A and 3.3A, 350V and 400V.
  • rDS(ON) = 1.8Ω and 2.5Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRF320 IRF321 IRF322 IRF323.

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Datasheet preview – IRF322

Datasheet Details

Part number IRF322
Manufacturer Intersil Corporation
File Size 67.83 KB
Description N-Channel Power MOSFET
Datasheet download datasheet IRF322 Datasheet
Additional preview pages of the IRF322 datasheet.

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Full PDF Text Transcription

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Semiconductor IRF320, IRF321, IRF322, IRF323 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17404. July 1998 Features • 2.8A and 3.3A, 350V and 400V • rDS(ON) = 1.8Ω and 2.
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