* -30V,-5A, RDS(ON) =40mΩ @VGS =-10V
* Improved dv/dt capability
* Fast switching
* Green Device Available Applications
* MB / VGA / Vcore
* Load.

SOT89 Pin Configuration D D S D G G S 2SJ355 BVDSS RDSON ID -30V 40m -5A Features
* -30V,-5A, RDS(ON) =4.

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

2SJ350

2SJ351

2SJ352

2SJ353

2SJ356

2SJ357

2SJ358

2SJ358C

2SJ302

2SJ302-Z

2SJ302-ZJ

2SJ303

2SJ304