n-channel mos field effect transistor.
VDSS= 500V, ID= 3A Drain-Source ON Resistance : RDS(ON)=2.5 Qg(typ) = 7.50nC
(Max) @VGS = 10V
trr(typ) = 120ns (KF3N50FS) trr(typ) = 300ns (KF3N50FZ)
MAXIMUM RATING (.
This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mod.
Image gallery
TAGS
Download (Size : 382.02KB)