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KEXIN

2SD1221 Datasheet Preview

2SD1221 Datasheet

NPN Transistors

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SMD Type
Transistors
NPN Transistors
2SD1221
Features
Low collector saturation voltage
: VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A)
High power dissipation: PC = 20 W (Tc = 25°C)
Complementary to 2SB906
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Ta = 25
Tc = 25
Electrical Characteristics Ta = 25
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
TJ
Tstg
2.3
4 .60 +0.15
-0.15
0.60+ 0.1
- 0.1
Rating
60
60
7
3
0.5
1
20
150
-55 to 150
Unit
V
A
W
1 Base
2 Collector
3 Emitter
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitte voltage
DC current gain
Turn-on time
Storage time
Fall time
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μAIE= 0
VCEO Ic= 50 mAIB= 0
VEBO IE= 100μAIC= 0
ICBO VCB= 60 V , IE= 0
IEBO VEB= 7V , IC=0
VCE(sat) IC=3 A, IB=300mA
VBE(sat) IC=3 A, IB=300mA
VBE VCE= 5V, IC= 500mA
hFE(1) VCE= 5V, IC= 500mA
hFE(2) VCE= 5V, IC= 3 A
ton
tstg See specified Test Circuit
tf
Cob VCB= 10V, IE= 0,f=1MHz
fT VCE= 5V, IC= 500mA
Min Typ Max Unit
60
60 V
7
0.1
uA
0.1
0.4 1
1.2 V
0.7 1
60 300
20
0.8
1.5 us
0.8
70 pF
3 MHz
Classification of hfe(1)
Type
2SD1221-O
Range
60-120
2SD1221-Y
100-200
2SD1221-G
150-300
www.kexin.com.cn 1




KEXIN

2SD1221 Datasheet Preview

2SD1221 Datasheet

NPN Transistors

No Preview Available !

SMD Type
NPN Transistors
2SD1221
Switching Time Test Circuit
20 μs
IB1
INPUT
OUTPUT
IB2 IB2
VCC = 30 V
IB1 = IB2 = 0.2 A, DUTY CYCLE 1%
Typical Characterisitics
Transistors
IC – VCE
90
80
3.0 70 Common emitter
60 Tc = 25°C
50
40
2.0 30
20
IB = 10 mA
1.0
IC – VBE
3.0
Common emitter
VCE = 5 V
2.0
1.0 Tc = 100°C 25 25
0
0
02468
Collector-emitter voltage VCE (V)
hFE – IC
500
Common emitter
300 VCE = 5 V
Tc = 100°C
25
100 25
50
30
10
0.03
0.1 0.3
1
Collector current IC (A)
3
0
0 0.4 0.8 1.2
Base-emitter voltage VBE (V)
VCE (sat) – IC
1
Common emitter
0.5 IC/IB = 10
0.3
1.6
0.1
0.05
Tc = 100°C
25
25
0.02
0.03
0.1 0.3
1
Collector current IC (A)
3
2 www.kexin.com.cn


Part Number 2SD1221
Description NPN Transistors
Maker KEXIN
Total Page 3 Pages
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