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2SD1760 Datasheet Preview

2SD1760 Datasheet

NPN Transistors

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SMD Type
NPN Transistors
2SD1760
Transistors
Features
Low VCE (sat)
Complementary to 2SB1184
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
Unit: mm
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Tc=25°C
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
2.3
4 .60 +0.15
-0.15
0.60+ 0.1
- 0.1
Rating
60
50
5
3
4.5
15
150
-55 to 150
Unit
V
A
W
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector Output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 uAIE= 0
VCEO Ic= 1 mAIB= 0
VEBO IE= 100 uAIC= 0
ICBO VCB= 50 V , IE= 0
IEBO VEB= 4V , IC=0
VCE(sat) IC=2 A, IB=200 mA
VBE(sat) IC=2 A, IB=200 mA
hFE VCE= 3V, IC= 500 mA
Cob VCB= 10V, IE= 0,f=1MHz
fT VCE= 5V, IE= -500mA,f=30MHz
Min Typ Max Unit
60
50 V
5
1
uA
1
0.5 1
1.2
V
120 390
40 pF
90 MHz
Classification of hfe
Type
Range
2SD1760-Q
120-270
2SD1760-R
180-390
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Kexin

2SD1760 Datasheet Preview

2SD1760 Datasheet

NPN Transistors

No Preview Available !

SMD Type
Transistors
Typical Characterisitics
10
VCE = 3V
5
2
1
Ta = 100°C
25°C
0.5 25°C
0.2
0.1
0.05
0.02
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
1000
500
Ta = 25°C
200
VCE = 5V
100
50
3V
20
10
5
2
1
0.01 0.02 0.05 0.1 0.2 0.5 1
2
5
COLLECTOR CURRENT : IC (A)
10
Fig.4 DC current gain vs.
collector current(1 )
NPN Transistors
2SD1760
3.0 Ta = 25°C
2.5 45mA
50mA
2.0
1.5
1.0
40mA
35mA
30mA
25mA
20mA
15mA
10mA
0.5 5mA
0 IB = 0mA
0 12 345
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics (1)
1000
500
VCE = 3V
200 Ta = 100°C
100
50 25°C
25°C
20
10
5
2
1
0.01 0.02 0.05 0.1 0.2 0.5 1 2
5 10
COLLECTOR CURRENT : IC (A)
Fig.5 DC current gain vs.
collector curren(2)
3.0 50mA
45mA
40mA
2.5 35mA
30mA
25mA
2.0 20mA
15mA
Ta = 25°C
1.5
10mA
1.0
IB = 5mA
0.5
PC = 15W
0
0 10 20 30 40 50
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded-emitter output
characteristics( 2)
10
Ta = 25°C
5
2
1
0.5
0.2
IC/IB = 50
0.1
20
0.05 10
0.02
0.01
0.010.02 0.05 0.1 0.2 0.5 1 2
5 10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation
voltage vs. collector current
10 lC/lB = 10
5
2
1 Ta = 25°C
0.5 VBE (sat)
0.2
25°C
100°C
0.1 Ta = 100°C
0.05
0.02
VCE (sat)
25°C
25°C
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2
5 10
COLLECTOR CURRENT : IC (A)
Fig.7 Collector-emitter saturation
voltage vs. collector current
Base-emitter saturation voltage
vs. collector current
1000
500
Ta = 25°C
VCE = 5V
200
100
50
20
10
5
2
1
1 2 5 10 20 50 100 200 5001000
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs.
emitter current
1000
500
200
100
50
Ta = 25°C
f = 1MHz
IE = 0A
20
10
5
2
1
0.1 0.2
0.5 1
2
5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.9 Collector output capacitance
vs. collector-base voltage
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Part Number 2SD1760
Description NPN Transistors
Maker Kexin
PDF Download

2SD1760 Datasheet PDF






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