MRF151G transistor equivalent, rf power field-effect transistor.
Guaranteed Performance at 175 MHz, 50 V:
* Output Power — 300 W
* Gain — 14 dB (16 dB Typ)
* Efficiency — 50%
* Low Thermal Resistance — 0.35°C/W
* Ru.
Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and bro.
and Applications
Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequenc.
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