Datasheet4U Logo Datasheet4U.com

MRF1517T1 - RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET

MRF1517T1 Description

( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1517/D The RF MOSFET Line RF Power Field Effe.

MRF1517T1 Features

* >
* 20 VDD = 7.5 Vdc Figure 20. Output Power versus Input Power Figure 21. Input Return Loss versus Output Power MOTOROLA RF DEVICE DATA MRF1517T1 7 TYPICAL CHARACTERISTICS, 440
* 480 MHz 17 440 MHz 15 Eff, DRAIN EFFICIENCY (%) 460 MHz 13 GAIN (dB) 480 MHz

MRF1517T1 Applications

* at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large
* signal, common source amplifier applications in 7.5 volt portable FM equipment.
* Specified Performance @ 520 MHz, 7.5 Volts D Output Power
* 8 Watts Power Gain

📥 Download Datasheet

Preview of MRF1517T1 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
MRF1517T1
Manufacturer
Motorola
File Size
243.61 KB
Datasheet
MRF1517T1_Motorola.pdf
Description
RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET

📁 Related Datasheet

  • MRF1517NT1 - RF Power Field Effect Transistor (Freescale Semiconductor)
  • MRF151 - RF Power Field-Effect Transistor (MACOM)
  • MRF1513NT1 - RF Power Field Effect Transistor N-Channel Enhancement Mode Lateral MOSFET (Freescale Semiconductor)
  • MRF151A - RF Power FET (MA-COM)
  • MRF151G - RF Power Field-Effect Transistor (MACOM)
  • MRF150 - N-CHANNEL MOS LINEAR RF POWER FET (Tyco Electronics)
  • MRF154 - Broadband RF Power MOSFET (MACOM)
  • MRF1550FNT1 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs (Freescale Semiconductor)

📌 All Tags

POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET Motorola
Motorola MRF1517T1-like datasheet