* DRAIN Cgd GATE Cds Cgs Ciss = Cgd = Cgs Coss = Cgd = Cds Crss = Cgd SOURCE LINEARITY AND GAIN CHARACTERISTICS In addition to the typical IMD and power gain data presented, Figure 6 may give the designer additional information on the capabilities of this device. The graph represents the MOTOROLA
MRF151
Motorola
214.15 KB
N-channel broadband rf power mosfet.
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF MOSFET Line RF Power Field-Effect.
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