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MCC

2N7002 Datasheet Preview

2N7002 Datasheet

N-Channel MOSFET

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Features
Advanced Trench Process Technology
Low Threshold Voltage
Fast Switching Speed
Epoxy Meets UL 94 V-0 Flammability Rating
Moisture Sensitivity Level 1
• Halogen Free Available Upon Request By Adding Suffix "-HF"
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
2N7002
N-Channel
MOSFET
Maximum Ratings
• Operating Junction Temperature Range: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
• Thermal Resistance: 625°C/W Junction to Ambient
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Power Dissipation
Symbol Rating
Unit
VDS
60
V
VGS
±20
V
ID
0.115
A
PD
0.2
W
Internal Structure
D
G
S
1. *$7E
2. 6285&(
3. '5$,1
Marking: 7002 / S72
SOT-23
A
D
3
12
F
E
CB
G
H
J
L
K
DIMENSIONS
DIM
INCHES
MM
MIN MAX MIN MAX
A 0.110 0.120 2.80 3.04
B 0.083 0.104 2.10 2.64
C 0.047 0.055 1.20 1.40
D 0.034 0.041 0.85 1.05
E 0.067 0.083 1.70 2.10
F 0.018 0.024 0.45 0.60
G 0.0004 0.006 0.01 0.15
H 0.035 0.043 0.90 1.10
J 0.003 0.007 0.08 0.18
K 0.012 0.020 0.30 0.51
L 0.007 0.020 0.20 0.50
NOTE
Suggested Solder Pad Layout
0.031
0.800
0.035
0.900
0.079
2.000
inches
mm
0.037
0.950
0.037
0.950
Rev.3-2-06112020
1/4
MCCSEMI.COM




MCC

2N7002 Datasheet Preview

2N7002 Datasheet

N-Channel MOSFET

No Preview Available !

2N7002
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Symbol
Test conditions
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=10µA
Gate-Threshold Voltage
VGS(th) VDS=VGS, ID=250µA
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Drain-Source On-Voltage
Forward Transconductance
IGSS VDS =0V, VGS =±20V
IDSS
ID(on)
RDS(on)
VDS(on)
VDS =60V, VGS =0V
VDS =60V, VGS =0V,TJ=125 oC
VDS =7.5V, VGS =10V
VGS=10V, ID=500mA
VGS=5V, ID=50mA
VGS=10V, ID=500mA
VGS=5V, ID=50mA
gfs
VDS =10V, ID =200mA
Diode Forward Voltage
VSD
Maximum Continuous Drain-Source
Diode Forward Current
IS
Input Capacitance
Ciss
Output Capacitance
Coss
VGS=0V, IS=115mA
VDS=25V,VGS=0V, f=1MHz
Reverse Transfer Capacitance
Crss
Turn-On Time
Turn-Off Time
td(on)
td(off)
VDD=30V,VGEN=10V,RL=150Ω,
ID=200mA,RGEN=25Ω
Min
60
1.0
500
80
Typ Max
2.0
2700
1.2
1.7
±100
80
1.0
7.5
7.5
3.75
1.5
1.5
Unit
V
V
nA
nA
μA
mA
Ω
V
ms
V
115
mA
50
25
pF
5
20
ns
20
Rev.3-2-06112020
2/4
MCCSEMI.COM


Part Number 2N7002
Description N-Channel MOSFET
Maker MCC
Total Page 3 Pages
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