MT4976 Datasheet | MOS-TECH

Description This plementary MOSFET device is produced using Mos-tech’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications - DC/DC converter - Power management - LCD backlight inverter Features - Q1: N-Channel 4.5 A, 60 V RDS(on) = 40 mΩ @ VGS = 10V RDS(on) = 45 mΩ @ VGS = 4.5V - Q2: P-Channel - 3.5 A, - 60 V RDS(on) = 70 mΩ @ VGS = - 10V RDS(on) = 81 mΩ @ VGS = - 4.5V - Ro HS pliant DD1DD2DD2 DD1 SO-8 Pin 1 SO-8 SS1GS1SS2GG2 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note 1c) Operating and Storage...