MT4976 Overview
Description
This complementary MOSFET device is produced using Mos-tech’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Key Features
- Q1: N-Channel 4.5 A, 60 V RDS(on) = 40 mΩ @ VGS = 10V RDS(on) = 45 mΩ @ VGS = 4.5V
- Q2: P-Channel –3.5 A, –60 V RDS(on) = 70 mΩ @ VGS = –10V RDS(on) = 81 mΩ @ VGS = –4.5V
