MT4946 Datasheet, Mosfet, MOS-TECH

MT4946 Features

• Mosfet This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has be

PDF File Details

Part number:

MT4946

Manufacturer:

MOS-TECH

File Size:

868.59kb

Download:

📄 Datasheet

Description:

N-channel power mosfet. Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either sy

TAGS

MT4946

MOS-TECH

📁 Related Datasheet

MT4914 - Dual N-Channel Power MOSFET (MOS-TECH)
MT4914 Dual N-Channel PowerTrench® MOSFET MOS-TECH Semiconductor Co.,LTD May 2009 MT4914 Dual N-Ch PowerTrench“ SyncFET™ General Description The MT.

MT4936 - N-Channel Power MOSFET (MOS-TECH)
Mos-Tech Semiconductor Co.,LTD. MT4936 N-Channel Enhancement Mode Field Effect Transistor FEATURES ● Super high dense cell design for low RDS(ON) .

MT4953 - Dual P-Channel High Density Trench MOSFET (matrix microtech)
.DataSheet.co.kr MT4953 Dual P-Channel High Density Trench MOSFET ‹ DESCRIPTION The MT4953 uses advanced technology to provide excellent Rds(on), .

MT4953 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET (ETC)
.DataSheet.co.kr P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description MT4953 The MT4953 provide the designer with the best bination of fast sw.

MT4953 - P-Channel Enhancement Mode Field Effect Transistor (Mos-tech Semiconductor)
Mos-Tech Semiconductor Co.,LTD. P-Channel Enhancement Mode Field Effect Transistor MT4953 FEATURES ● Super high dense cell design for low RDS(ON) ●.

MT4953A - Dual 30 P-Channel Power MOSFET (MOS TECH)
w w w . D a t a S h e e t . c o . k r 07 $ MOS-TECH Semiconductor Co.,LTD Sep 20 07 $ Dual 30 P-Channel PowerMOSFET General Description Th.

MT4966 - Dual N-Channel Powe MOSFET (MOS-TECH)
MOS-TECH Semiconductor Co.,LTD MT4966 Dual N-Channel Powe MOSFET 100 V, 4.7 A, 102 mΩ Features „ Max rDS(on) = 102 mΩ at VGS = 10 V, ID = 2.7 A „ Max.

MT4976 - MOSFET (MOS-TECH)
MOS-TECH Semiconductor Co.,LTD MT4976 60V Complementary Power MOSFET General Description This plementary MOSFET device is produced using Mos-tech’.

MT49H16M16 - 2 Meg x 16 x 8 Banks Reduced Latency DRAM (Micron)
256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM Features Reduced Latency DRAM (RLDRAM®) MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 1.

MT49H16M18 - 16 Meg x 18 x 8 Banks CIO RLDRAM 2 (Micron Technology)
CIO RLDRAM 2 MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks 288Mb: x9, x18, x36 CIO RLDRAM 2 Fe.