MT4953 Datasheet - matrix microtech

MT4953 Dual P-Channel High Density Trench MOSFET

The MT4953 uses advanced technology to provide excellent Rds(on), low switching loss and reasonable price. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer .

MT4953 Features

* -30V/-4.9A, RDS(ON) = 65mΩ @ VGS = -10V -30V/-3.6A, RDS(ON) = 105mΩ @ VGS = -4.5V Super high dense cell trench design for low RDS(ON) Rugged and reliable SOP-8 package design ¾ ¾ ¾ ¾ APPLICATIONS POWER Management in Note Portable Equipment Battery Powered System DC/DC Converter LCD Display ¾

MT4953_matrixmicrotech.pdf