MT4966, MT4966-MOS Datasheet - MOS-TECH

MT4966 Dual N-Channel Powe MOSFET

This N-Channel MOSFET is produced using MOS-TECH Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Applications * Synchronous Rectifier * Primary Switch For Bridge Topology D2 D1 D1 D2 Pin 1 G2 S2 G1 S1 SO-8.

MT4966 Features

* Max rDS(on) = 102 mΩ at VGS = 10 V, ID = 2.7 A

* Max rDS(on) = 106 mΩ at VGS = 6 V, ID = 2.1 A

* High performance trench technology for extremely low rDS(on)

* High power and current handling capability in a widely used surface mount package

* 100% UIL Teste

MT4966-MOS-TECH.pdf

MT4966 Datasheet Preview — This datasheet PDF includes multiple part numbers: MT4966, MT4966-MOS. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MT4966, MT4966-MOS

Manufacturer:

MOS-TECH

File Size:

538.07 KB

Description:

Dual n-channel powe mosfet.

Note:

This datasheet PDF includes multiple part numbers: MT4966, MT4966-MOS.
Please refer to the document for exact specifications by model.

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TAGS

MT4966 MT4966-MOS Dual N-Channel Powe MOSFET MOS-TECH

MT4966 Distributor