MT4966, MT4966-MOS Dual N-Channel Powe MOSFET

MOS-TECH

Description

MOS-TECH Semiconductor Co.,LTD MT4966 Dual N-Channel Powe MOSFET 100 V, 4.7 A, 102 mΩ .
This N-Channel MOSFET is produced using MOS-TECH Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching perform.

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MT4966 Datasheet Preview — This datasheet PDF includes multiple part numbers: MT4966, MT4966-MOS. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: MT4966, MT4966-MOS
Manufacturer: MOS-TECH
File Size: 538.07 KB
Datasheet: MT4966-MOS-TECH.pdf
Description: Dual N-Channel Powe MOSFET
Note: This datasheet PDF includes multiple part numbers: MT4966, MT4966-MOS.
Please refer to the document for exact specifications by model.

Features

* Max rDS(on) = 102 mΩ at VGS = 10 V, ID = 2.7 A
* Max rDS(on) = 106 mΩ at VGS = 6 V, ID = 2.1 A
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability in a widely used surface mount package
* 100% UIL Teste

Applications

* Synchronous Rectifier
* Primary Switch For Bridge Topology D2 D1 D1 D2 Pin 1 G2 S2 G1 S1 SO-8 D2 5 D2 6 D1 7 D1 8 Q2 Q1 4 G2 3 S2 2 G1 1 S1 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate

MT4966 Distributors

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MT4966-MOS Dual N-Channel Powe MOSFET MOS-TECH

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