MT4966 Datasheet, Mosfet, MOS-TECH

MT4966 Features

• Mosfet
• Max rDS(on) = 102 mΩ at VGS = 10 V, ID = 2.7 A
• Max rDS(on) = 106 mΩ at VGS = 6 V, ID = 2.1 A
• High performance trench technology for extremely low rDS(on) <

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Part number:

MT4966

Manufacturer:

MOS-TECH

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538.07kb

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📄 Datasheet

Description:

Dual n-channel powe mosfet. This N-Channel MOSFET is produced using MOS-TECH Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on),

MT4966 Application

• Applications
• Synchronous Rectifier
• Primary Switch For Bridge Topology D2 D1 D1 D2 Pin 1 G2 S2 G1 S1 SO-8 D2 5 D2 6 D1 7 D1

TAGS

MT4966

MOS-TECH

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