MwT-5F fet equivalent, dual gate gaas fet.
* 21 dBm P1dB at 12 GHz
* 19 dB Small Signal Gain at 12 GHz
* 0.25 Micron Refractory Metal/Gold Gate
* Excellent for High Gain and High Linear
Amplifier .
* Ideal for Commercial, Military, Hi-Rel Space
Applications
* 300 Micron Dual Gate Width
* Choice of Chip an.
The MwT-5F is a dual gate GaAs MESFET device whose nominal 0.25 micron gate length and 300 micron dual gate width make it ideally suited to applications requiring high gain and high linearity in the 500 MHz to 26 GHz frequency range. MwT-5F is equa.
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