* 21 dBm Output Power at 12 GHz
* 15 dB Small Signal Gain at 12 GHz
* Excellent for High Linear Gain or Oscillator
Applications
* Ideal for Commercial, M.
* Ideal for Commercial, Military, Hi-Rel Space
Applications
* 0.25 Micron Refractory Metal/Gold Gate
* 250 M.
The MwT-7F is a GaAs MESFET device whose nominal 0.25 micron gate length and 250 micron gate width make it ideally suited to applications requiring high-gain and medium linear power in the 500 MHz to 26 GHz frequency range. MwT-7F is equally effect.
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