Click to expand full text
MwT-7F 26 GHz Medium Power GaAs FET
Features:
• 21 dBm Output Power at 12 GHz • 15 dB Small Signal Gain at 12 GHz • Excellent for High Linear Gain or Oscillator
Applications
• Ideal for Commercial, Military, Hi-Rel Space
Applications
• 0.25 Micron Refractory Metal/Gold Gate • 250 Micron Gate Width • Choice of Chip and Three Package Types
Chip Dimensions: 365 x 250 microns Chip Thickness: 100 microns
Description:
The MwT-7F is a GaAs MESFET device whose nominal 0.25 micron gate length and 250 micron gate width make it ideally suited to applications requiring high-gain and medium linear power in the 500 MHz to 26 GHz frequency range. MwT-7F is equally effective for either wideband (e.g., 6 to 18 GHz) or narrow-band applications.
MwT-7F Datasheet
