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MwT-PH11FV, MwT-PH11F Datasheet - MWT

MwT-PH11FV - 12-GHz High Power AlGaAs/InGaAs pHEMT

The MwT-PH11F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 2400 micron gate width make it ideally suited for applications requiring high power and high power added efficiency up to 12 GHz frequency range. The device is

MwT-PH11FV Features

* 33 dBm of Power at 12 GHz

* 12 dB Small Signal Gain at 12 GHz

* 45% PAE at 12 GHz

* 0.25 x 2400 Micron Refractory Metal/Gold Gate

* Excellent for High Power, and High Power Added Efficiency

* Ideal for Commercial, Military, Hi-Rel Space Application

MwT-PH11F-MWT.pdf

This datasheet PDF includes multiple part numbers: MwT-PH11FV, MwT-PH11F. Please refer to the document for exact specifications by model.
MwT-PH11FV Datasheet Preview Page 2 MwT-PH11FV Datasheet Preview Page 3

Datasheet Details

Part number:

MwT-PH11FV, MwT-PH11F

Manufacturer:

MWT

File Size:

1.86 MB

Description:

12-ghz high power algaas/ingaas phemt.

Note:

This datasheet PDF includes multiple part numbers: MwT-PH11FV, MwT-PH11F.
Please refer to the document for exact specifications by model.

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📌 All Tags

MwT-PH11F 12-GHz High Power AlGaAs InGaAs pHEMT MWT