MwT-PH33F Description
The MwT-PH33F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 300 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 26 GHz frequency range. The device is equally effective for either wideband (e.g. 6 to 18 GHz) or narrow-band applications.
MwT-PH33F Key Features
- 24 dBm of Power at 18 GHz
- 14 dB Small Signal Gain at 18 GHz
- 45% typical PAE at 18 GHz
- 0.25 x 300 Micron Refractory Metal/Gold Gate
- Excellent for Medium Power, Gain, and High
- Ideal for mercial, Military, Hi-Rel Space