MwT-PH33F
Features
:
- 24 d Bm of Power at 18 GHz
- 14 d B Small Signal Gain at 18 GHz
- 45% typical PAE at 18 GHz
- 0.25 x 300 Micron Refractory Metal/Gold Gate
- Excellent for Medium Power, Gain, and High
Power Added Efficiency
- Ideal for mercial, Military, Hi-Rel Space
Applications Chip Dimensions: 415 x 315 microns Chip Thickness: 100 microns
Description
:
The Mw T-PH33F is a Al Ga As/In Ga As p HEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 300 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 26 GHz frequency range. The device is equally effective for either wideband (e.g. 6 to 18 GHz) or narrow-band applications. The chip is produced using reliable metal systems and passivated to insure excellent reliability.
Electrical Specifications: at Ta= 25 °C
DC Specifications: at Ta= 25 °C
.cmlmicro.
February 2022
Mw T-PH33F
26 GHz Medium Power Al Ga As/In Ga As p HEMT
.cmlmicro.
February...
