MwT-PH33F phemt equivalent, medium power algaas/ingaas phemt.
* 24 dBm of Power at 18 GHz
* 14 dB Small Signal Gain at 18 GHz
* 45% typical PAE at 18 GHz
* 0.25 x 300 Micron Refractory Metal/Gold Gate
* Excellen.
Chip Dimensions: 415 x 315 microns Chip Thickness: 100 microns
Description:
The MwT-PH33F is a AlGaAs/InGaAs pHEMT (Pseu.
The MwT-PH33F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 300 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 26 GHz.
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