MwT-11F fet equivalent, high linearity gaas fet.
* 32 dBm Output Power at 8 GHz
* 9 dB Typical Small Signal Gain at 8 GHz
* 0.25 x 2400 Micron Refractory Metal/Gold Gate
* Excellent for Linear High Powe.
* Ideal for Commercial, Military, Hi-Rel Space
Applications
* Choice of Chip and One Package Type
Description:
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Chip Dimensions: 780 x 345 microns Chip Thickness: 100 microns
The MwT-11F is GaAs MESFET device whose nominal 0.25 micron gate length and 2400 microns gate width make it ideally suited for applications requiring high power up to 32 dBm. The devic.
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