Datasheet4U.com

ME06N10 - N-Channel MOSFET

Matsuki

📥 Download Datasheet

ME06N10 Datasheet Preview — Preview of ME06N10 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	ME06N10
Manufacturer	Matsuki
File Size	858.89 KB
Description	N-Channel MOSFET
Datasheet	ME06N10-Matsuki.pdf

ME06N10 Product details

Description

The ME25N06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

RDS(ON)≦200mΩ@VGS=10V.
RDS(ON)≦260mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

📁 ME06N10 Similar Datasheet

ME01 - 1cell Li-ion/Li-polymer battery protection (MITSUMI)
ME030-350 - Closed ends Header (DECA)
ME030-508 - Pluggable terminal blocks (Lumberg)

Other Datasheets by Matsuki

ME06N10-G - N-Channel MOSFET
ME04N25 - N-Channel MOSFET
ME04N25-G - N-Channel MOSFET
ME07N25 - N-Channel MOSFET
ME07N25-G - N-Channel MOSFET
ME08N20 - N-Channel MOSFET

Published: Mar 9, 2015 |