ME1303AT3-G, ME1303AT3 Datasheet - Matsuki

ME1303AT3-G P-Channel Enhancement Mode Mosfet

The ME1303AT3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such.

ME1303AT3-G Features

* -20V/-3.4A,RDS(ON)=95mΩ@VGS=-4.5V

* -20V/-2.4A,RDS(ON)=120mΩ@VGS=-2.5V

* -20V/-1.7A,RDS(ON)=180mΩ@VGS=-1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

ME1303AT3-Matsuki.pdf

ME1303AT3-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME1303AT3-G, ME1303AT3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME1303AT3-G, ME1303AT3

Manufacturer:

Matsuki

File Size:

965.01 KB

Description:

P-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME1303AT3-G, ME1303AT3.
Please refer to the document for exact specifications by model.

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ME1303AT3-G ME1303AT3 P-Channel Enhancement Mode Mosfet Matsuki

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