ME200N04T-G Description
The ME200N04T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
ME200N04T-G Key Features
- RDS(ON)≦3.5mΩ@VGS=10V
- RDS(ON)≦4.7mΩ@VGS=5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current