ME2308S-G, ME2308S Datasheet - Matsuki

ME2308S-G N-Channel 60V (D-S) MOSFET

The ME2308S is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME2308S-G Features

* RDS(ON) ≦100mΩ@VGS=10V

* RDS(ON) ≦130mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* DC/DC Converter

* Load Switc

ME2308S-Matsuki.pdf

ME2308S-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME2308S-G, ME2308S. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME2308S-G, ME2308S

Manufacturer:

Matsuki

File Size:

1.00 MB

Description:

N-channel 60v (d-s) mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME2308S-G, ME2308S.
Please refer to the document for exact specifications by model.

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ME2308S-G ME2308S N-Channel 60V D-S MOSFET Matsuki

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