ME2333-G Datasheet, Matsuki

* RDS(ON)≦35mΩ@VGS=-4.5V
* RDS(ON)≦49mΩ@VGS=-2.5V
* RDS(ON)≦69mΩ@VGS=-1.8V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on.

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Lo.

The ME2333 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are partic.