ME3587-G, ME3587 Datasheet - Matsuki

ME3587-G N- & P-Channel 20V (D-S) MOSFET

The ME3587 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application .

ME3587-G Features

* RDS(ON) ≦45mΩ@VGS=4.5V (N-Ch)

* RDS(ON) ≦68mΩ@VGS=2.5V (N-Ch)

* RDS(ON) ≦120mΩ@VGS=1.8V (N-Ch)

* RDS(ON) ≦110mΩ@VGS=-4.5V (P-Ch)

* RDS(ON)≦130mΩ@VGS=-2.5V (P-Ch)

* RDS(ON) ≦170mΩ@VGS=-1.8V (P-Ch)

* Super high density cell design for extremely low RDS(ON)

* Exception

ME3587-Matsuki.pdf

ME3587-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME3587-G, ME3587. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME3587-G, ME3587

Manufacturer:

Matsuki

File Size:

1.21 MB

Description:

N- & p-channel 20v (d-s) mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME3587-G, ME3587.
Please refer to the document for exact specifications by model.

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TAGS

ME3587-G ME3587 P-Channel 20V D-S MOSFET Matsuki

ME3587-G Distributor