ME3587-G mosfet equivalent, n- & p-channel 20v (d-s) mosfet.
* RDS(ON) ≦45mΩ@VGS=4.5V (N-Ch)
* RDS(ON) ≦68mΩ@VGS=2.5V (N-Ch)
* RDS(ON) ≦120mΩ@VGS=1.8V (N-Ch)
* RDS(ON) ≦110mΩ@VGS=-4.5V (P-Ch)
* RDS(ON)≦130mΩ@VGS.
* Power Management in Note.
The ME3587 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices ar.
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