Datasheet4U Logo Datasheet4U.com

2N6661 - N-Channel Enhancement-Mode Vertical DMOS FET

General Description

2N6661 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a wellproven silicon-gate manufacturing process.

Key Features

  • Free from secondary breakdown.
  • Low power drive requirement.
  • Ease of paralleling.
  • Low CISS and fast switching speeds.
  • Excellent thermal stability.
  • Integral source-drain diode.
  • High input impedance and high gain.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2N6661 N-CHANNEL ENHANCEMENT MODE POWER MOSFET Seme LAB
2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Supertex Inc
2N6661 TMOS SWITCHING FET TRANSISTORS Motorola Inc
2N6661 N-Channel MOSFET Vishay Siliconix
2N6661 N-CHANNEL ENHANCEMENT MODE POWER MOSFET TT

Other Datasheets by Microchip Technology

Part Number Description
2N6660 N-Channel Enhancement-Mode Vertical DMOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N6661 N-Channel, Enhancement-Mode, Vertical DMOS FET Features • Free from secondary breakdown • Low power drive requirement • Ease of paralleling • Low CISS and fast switching speeds • Excellent thermal stability • Integral source-drain diode • High input impedance and high gain Applications • Motor controls • Converters • Amplifiers • Switches • Power supply circuits • Drivers: relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc. Description 2N6661 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a wellproven silicon-gate manufacturing process.