2N6661 - N-Channel Enhancement-Mode Vertical DMOS FET

Description

2N6661 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a wellproven silicon-gate manufacturing process.

Features

Free from secondary breakdown.
Low power drive requirement.
Ease of paralleling.
Low CISS and fast switching speeds.
Excellent thermal stability.
Integral source-drain diode.
High input impedance and high gain.

Microchip

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Datasheet Details

Part number	2N6661
Manufacturer	Microchip
File Size	292.64 KB
Description	N-Channel Enhancement-Mode Vertical DMOS FET
Datasheet	2N6661 Datasheet
Additional preview pages of the 2N6661 datasheet.

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2N6660 - N-Channel Enhancement-Mode Vertical DMOS FET

Full PDF Text Transcription

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2N6661 N-Channel, Enhancement-Mode, Vertical DMOS FET Features • Free from secondary breakdown • Low power drive requirement • Ease of paralleling • Low CISS and fast switching speeds • Excellent thermal stability • Integral source-drain diode • High input impedance and high gain Applications • Motor controls • Converters • Amplifiers • Switches • Power supply circuits • Drivers: relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc. Description 2N6661 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a wellproven silicon-gate manufacturing process.

Published: Sep 1, 2016 |