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  Microchip Technology Semiconductor Electronic Components Datasheet  

2N6661 Datasheet

N-Channel Enhancement-Mode Vertical DMOS FET

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2N6661
N-Channel, Enhancement-Mode, Vertical DMOS FET
Features
• Free from secondary breakdown
• Low power drive requirement
• Ease of paralleling
• Low CISS and fast switching speeds
• Excellent thermal stability
• Integral source-drain diode
• High input impedance and high gain
Applications
• Motor controls
• Converters
• Amplifiers
• Switches
• Power supply circuits
• Drivers: relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.
Description
2N6661 is an enhancement-mode (normally-off) tran-
sistor that utilizes a vertical DMOS structure and a well-
proven silicon-gate manufacturing process. This com-
bination produces a device with the power-handling
capabilities of bipolar transistors, and the high input
impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS struc-
tures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very-
low threshold voltage, high breakdown voltage, high-
input impedance, low-input capacitance, and fast
switching speeds are desired.
Package Types
GATE
SOURCE
DRAIN
TO-39
Case: Drain
See Table 2-1 for pin information
2016 Microchip Technology Inc.
DS20005516A-page 1


  Microchip Technology Semiconductor Electronic Components Datasheet  

2N6661 Datasheet

N-Channel Enhancement-Mode Vertical DMOS FET

No Preview Available !

2N6661
1.0 ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
Drain-to-source voltage ......................................................................................................................................... BVDSS
Drain-to-gate voltage.............................................................................................................................................BVDGS
Gate-to-source voltage............................................................................................................................................ ±20V
Operating and Storage Temperature .......................................................................................................... -55 to 150 °C
† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at those or any other conditions above those indicated in the
operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods
may affect device reliability.
ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, for all specifications TA = +25°C
Parameter
Symbol
Min Typ Max Units Conditions
DC Parameters (Note 1, unless otherwise stated)
Drain-to-source breakdown voltage
Gate threshold voltage
VGS(th) change with temperature
Gate body leakage current
Zero gate voltage drain current
BVDSS
VGS(th)
VGS(th)
IGSS
IDSS
On-state drain current
Static drain-to-source on-state
resistance
AC Parameters (Note 2)
ID(ON)
RDS(ON)
90 -
- V VGS= 0V, ID= 10µA
0.8 - 2.0 V VGS= VDS, ID= 1.0mA
- -3.8 -5.5 mV/°C VGS= VDS, ID= 1.0mA (Note 2)
- - 100 nA VGS= ±20V, VDS= 0V
- - 10 µA VGS= 0V, VDS= Max rating
- - 500
VDS= 0.8 Max Rating,
VGS= 0V, TA= 125°C (Note 2)
1.5 -
- A VGS= 10V, VDS= 10V
- - 5.0 VGS= 5.0V, ID= 0.3A
- - 4.0
VGS= 10V, ID= 1.0A
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode Parameters
GFS
CISS
COSS
CRSS
t(ON)
t(OFF)
170 -
--
--
--
--
--
- mmho VDS= 25V, ID= 0.5A
50 pF VGS= 0V,
40
VDS= 24V,
f = 1.0MHz
10
10 ns VDD= 25V, ID= 1.0A,
10 RGEN= 25
Diode forward voltage drop
VSD
- 1.2 -
V VGS= 0V, ISD= 1.0A (Note 1)
Reverse recovery time
trr
- 350 -
ns VGS= 0V, ISD= 1.0A (Note 2)
Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle.
2: Specification is obtained by characterization and is not 100% tested.
TEMPERATURE SPECIFICATIONS
Parameter
Symbol
Temperature Ranges
Operating and Storage Temperature
TA
Min Typ Max Units Conditions
-55 – 150 °C
DS20005516A-page 2
2016 Microchip Technology Inc.


Part Number 2N6661
Description N-Channel Enhancement-Mode Vertical DMOS FET
Maker Microchip
Total Page 10 Pages
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