2N6661 Datasheet | Specifications & PDF Download

N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661 • VDSS = 90V , ID = 0.9A, RDS(ON) = 4.0Ω • Fast Switching • Low Threshold Voltage (Logic Level) • Low

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2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV www.vishay.com Vishay Siliconix N-Channel 90 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661 • VDSS = 90V , ID = 0.9A, RDS(ON) = 4.0Ω • Fast Switching • Low Threshold Voltage (Logic Level) • Low

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2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV www.vishay.com Vishay Siliconix N-Channel 90 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS

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2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV www.vishay.com Vishay Siliconix N-Channel 90 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS

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Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features ►►Free from secondary breakdown ►►Low power drive requirement ►►Ease of

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2N6660, 2N6661 N Channel Power MOSFET Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/547 • Features Low On-Resistance, Fast Swi

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2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV www.vishay.com Vishay Siliconix N-Channel 90 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS

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2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661 N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR These TMOS Power FETs are designed. for h

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2N6661 N-Channel, Enhancement-Mode, Vertical DMOS FET Features • Free from secondary breakdown • Low power drive requirement • Ease of paralleling •

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