• Part: M2S28D20ATP
  • Description: 128M Double Data Rate Synchronous DRAM
  • Manufacturer: Mitsubishi Electric
  • Size: 1.19 MB
Download M2S28D20ATP Datasheet PDF
M2S28D20ATP page 2
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M2S28D20ATP Key Features

  • Vdd=Vddq=2.5V+0.2V
  • Double data rate architecture; two data transfers per clock cycle
  • Bidirectional, data strobe (DQS) is transmitted/received with data
  • Differential clock inputs (CLK and /CLK)
  • DLL aligns DQ and DQS transitions with CLK transitions edges of DQS
  • mands entered on each positive CLK edge
  • data and data mask referenced to both edges of DQS
  • 4 bank operation controlled by BA0, BA1 (Bank Address)
  • /CAS latency- 2.0/2.5 (programmable)
  • Burst length- 2/4/8 (programmable)