Part MGFC38V6472
Description C band internally matched power GaAs FET
Manufacturer Mitsubishi Electric
Size 108.77 KB
Mitsubishi Electric

MGFC38V6472 Overview

Description

The MGFC38V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

Key Features

  • High output power P1dB=6W (TYP.) @f=6.4 – 7.2GHz
  • High power gain GLP=9dB (TYP.) @f=6.4 – 7.2GHz
  • High power added efficiency P.A.E.=31% (TYP.) @f=6.4 – 7.2GHz
  • Low distortion [ item -51] IM3=-45dBc (TYP.) @Po=27dBm S.C.L