MGFC36V3436 3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET

Mitsubishi

Description

MITSUBISHI SEMICONDUCTOR MGFC36V3436 3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET .
The MGFC36V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.

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Datasheet Specifications

Part number: MGFC36V3436
Manufacturer: Mitsubishi
File Size: 131.81 KB
Datasheet: MGFC36V3436_MitsubishiElectricSemiconductor.pdf
Description: 3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET

Features

* Class A operation Internally matched to 50(ohm) system High output power P1dB = 4W (TYP. ) @ f=3.4 - 3.6 GHz High power gain GLP = 12 dB (TYP. ) @ f=3.4 - 3.6GHz High power added efficiency P. A. E. = 32 % (TYP. ) @ f=3.4 - 3.6GHz Low distortion [item -51] IM3=-45dBc(Typ. ) @Po=25dBm S. C. L. (1) 0.6 +/-0.

MGFC36V3436 Distributors

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MGFC36V3436 3.4 3.6GHz BAND INTERNALLY MATCHED GaAs FET Mitsubishi

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