MGFC36V3436 - 3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET

Mitsubishi

Datasheet Details

Part number	MGFC36V3436
Manufacturer	Mitsubishi
File Size	131.81 KB
Description	3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET
Datasheet	MGFC36V3436_MitsubishiElectricSemiconductor.pdf

The MGFC36V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers.

Class A operation Internally matched to 50(ohm) system High output power P1dB = 4W (TYP. ) @ f=3.4 - 3.6 GHz High power gain GLP = 12 dB (TYP. ) @ f=3.4 - 3.6GHz High power added efficiency P. A. E. = 32 % (TYP. ) @ f=3.4 - 3.6GHz Low distortion [item -51] IM3=-45dBc(Typ. ) @Po=25dBm S. C. L. (1) 0.6 +/-0.15 (2) (2) R-1.6 3 . 1 1 (3) 10.7 2 . 0 / + 1 . 0 6 . 2.

📁 MGFC36V3436 Similar Datasheet

MGFC39V5867 - C band internally matched power GaAs FET (Mitsubishi Electric)
MGFC40V3742 - C band internally matched power GaAs FET (Mitsubishi Electric)
MGFC40V4450 - C band internally matched power GaAs FET (Mitsubishi Electric)
MGFC40V5964 - C band internally matched power GaAs FET (Mitsubishi Electric)
MGFC41V6472 - C band internally matched power GaAs FET (Mitsubishi Electric)
MGFC41V7177 - C band internally matched power GaAs FET (Mitsubishi Electric)
MGFC42V5867 - 16W INTERNALLHY MATCHED GaAs FET (Mitsubishi Electric)
MGFC42V5964A - C band internally matched power GaAs FET (Mitsubishi Electric)

Other Datasheets by Mitsubishi

Published: Apr 29, 2005 |