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MGFC36V3436 Datasheet - Mitsubishi

MGFC36V3436 3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET

MGFC36V3436 Features

* Class A operation Internally matched to 50(ohm) system High output power P1dB = 4W (TYP.) @ f=3.4 - 3.6 GHz High power gain GLP = 12 dB (TYP.) @ f=3.4 - 3.6GHz High power added efficiency P.A.E. = 32 % (TYP.) @ f=3.4 - 3.6GHz Low distortion [item -51] IM3=-45dBc(Typ.) @Po=25dBm S.C.L. (1) 0.6 +/-0.

MGFC36V3436_MitsubishiElectricSemiconductor.pdf

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Datasheet Details

Part number:

MGFC36V3436

Manufacturer:

Mitsubishi

File Size:

131.81 KB

Description:

3.4 - 3.6ghz band 4w internally matched gaas fet.

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MGFC36V3436 MGFC36V3436 3.4 3.6GHz BAND INTERNALLY MATCHED GaAs FET Mitsubishi

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