MGFC36V5964A Datasheet - Mitsubishi

C band internally matched power GaAs FET

* Class A operation Internally matched to 50(ohm) system

* High output power P1dB=4W (TYP.) @f=5.9

* 6.4GHz

* High power gain GLP=10.5dB (TYP.) @f=5.9

* 6.4GHz

* High power added efficiency P.A.E.=30% (TYP.) @f=5.9

* 6.4GHz

* Low distortion [ item -51] IM3=-45dB

MGFC36V5964A

Mitsubishi

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C band internally matched power gaas fet.

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