MGFC36V5258 Datasheet, Fet, Mitsubishi

MGFC36V5258 Features

  • Fet Class A operation Internally matched to 50(ohm) system
  • High output power P1dB=4W (TYP.) @f=5.2
      – 5.8GHz
  • High power gain GLP=10dB (TYP.) @f=5.2
    &n

PDF File Details

Part number:

MGFC36V5258

Manufacturer:

Mitsubishi

File Size:

125.00kb

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📄 Datasheet

Description:

C band internally matched power gaas fet. The MGFC36V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2   – 5.8 GHz band a

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TAGS

MGFC36V5258
band
internally
matched
power
GaAs
FET
Mitsubishi

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Stock and price

Mitsubishi Electric
5.2-5.8 GHZ BAND 4W INTERNALLY MATCHED GAAS FET RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
ComSIT USA
MGFC36V525801
15 In Stock
0
Unit Price : $0
No Longer Stocked
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