Part number:
MGFC36V4450A
Manufacturer:
Mitsubishi
File Size:
180.79 KB
Description:
4.4 ~ 5.0ghz band 4w internally matched gaas fet.
* Class A operation Internally matched to 50(ohm) system High output power P1dB = 4W (TYP.) @ f=4.4~5.0GHz High power gain GLP = 12 dB (TYP.) @ f=4.4~5.0GHz High power added efficiency P.A.E. = 32 % (TYP.) @ f=4.4~5.0GHz Low distortion [ item -51 ] IM3= -45 dBc(TYP.) @Po=25dBm S.C.L. 2MIN (1) 0.6 +/-
MGFC36V4450A Datasheet (180.79 KB)
MGFC36V4450A
Mitsubishi
180.79 KB
4.4 ~ 5.0ghz band 4w internally matched gaas fet.
📁 Related Datasheet
MGFC36V3436 - 3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET
(Mitsubishi)
MITSUBISHI SEMICONDUCTOR
MGFC36V3742A - C band internally matched power GaAs FET
(Mitsubishi)
< C band internally matched power GaAs FET >
MGFC36V3742A
3.7 – 4.2 GHz BAND / 4W
11.3
DESCRIPTION
The MGFC36V3742A is an internally impedance-match.
MGFC36V5258 - C band internally matched power GaAs FET
(Mitsubishi)
< C band internally matched power GaAs FET >
MGFC36V5258
5.2 – 5.8 GHz BAND / 4W
DESCRIPTION
The MGFC36V5258 is an internally impedance-matched GaAs p.
MGFC36V5964A - C band internally matched power GaAs FET
(Mitsubishi)
< C band internally matched power GaAs FET >
MGFC36V5964A
5.9 -6.4 GHz BAND / 4W
11.3
DESCRIPTION
The MGFC36V5964A is an internally impedance-matche.
MGFC36V6472A - C band internally matched power GaAs FET
(Mitsubishi)
< C band internally matched power GaAs FET >
MGFC36V6472A
6.4 – 7.2 GHz BAND / 4W
11.3
DESCRIPTION
The MGFC36V6472A is an internally impedance-match.
MGFC36V7177A - C band internally matched power GaAs FET
(Mitsubishi)
< C band internally matched power GaAs FET >
MGFC36V7177A
7.1 – 7.7 GHz BAND / 4W
11.3
DESCRIPTION
The MGFC36V7177A is an internally impedance-match.
MGFC36V7785 - GaAs FET
(Mitsubishi)
.
MGFC36V7785A - C band internally matched power GaAs FET
(Mitsubishi)
< C band internally matched power GaAs FET >
MGFC36V7785A
7.7 – 8.5 GHz BAND / 4W
11.3
DESCRIPTION
The MGFC36V7785A is an internally impedance-match.