MGFC36V4450A 4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET

Mitsubishi

Description

MITSUBISHI SEMICONDUCTOR MGFC36V4450A 4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET .
The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.

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Datasheet Specifications

Part number: MGFC36V4450A
Manufacturer: Mitsubishi
File Size: 180.79 KB
Datasheet: MGFC36V4450A_MitsubishiElectricSemiconductor.pdf
Description: 4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET

Features

* Class A operation Internally matched to 50(ohm) system High output power P1dB = 4W (TYP. ) @ f=4.4~5.0GHz High power gain GLP = 12 dB (TYP. ) @ f=4.4~5.0GHz High power added efficiency P. A. E. = 32 % (TYP. ) @ f=4.4~5.0GHz Low distortion [ item -51 ] IM3= -45 dBc(TYP. ) @Po=25dBm S. C. L. 2MIN (1) 0.6 +/-

MGFC36V4450A Distributors

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MGFC36V4450A 4.4 5.0GHz BAND INTERNALLY MATCHED GaAs FET Mitsubishi

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