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MGFC47A7785 - C band internally matched power GaAs FET

General Description

The MGFC47A7785 is an internally impedance-matched GaAs power FET especially designed for use in 7.7

8.5 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Key Features

  • Class A operation Internally matched to 50(ohm) system.
  • High output power P1dB=46.7dBm (TYP. ) @f=7.7.
  • 8.5GHz.
  • High power gain GLP=5.7dB (TYP. ) @f=7.7.
  • 8.5GHz.
  • High power added efficiency PAE=30% (TYP. ) @f=7.7.
  • 8.5GHz.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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< C band internally matched power GaAs FET > MGFC47A7785 7.7 – 8.5 GHz BAND / 47W DESCRIPTION The MGFC47A7785 is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=46.7dBm (TYP.) @f=7.7 – 8.5GHz  High power gain GLP=5.7dB (TYP.) @f=7.7 – 8.5GHz  High power added efficiency PAE=30% (TYP.) @f=7.7 – 8.5GHz APPLICATION  Solid-state power amplifier for satellite earth-station communication transmitter and VSAT 2MIN . 17 .4 +/-0.2 8.0+/-0.2 2.4 2 MIN. OUTLINE DRAWING Unit : millimeters 2 4+/-0.3 (1) (2 ) (3) 0 .7 +/-0.15 20 .4 +/-0.2 1 6.7 1.3 15.8 4.7 m ax. 2 .