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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMFT108T1/D
Field Effect Transistor
N–Channel Enhancement–Mode Logic Level SOT–223
®
2, 4 DRAIN
MMFT108T1
TMOS FET TRANSISTOR N–CHANNEL — ENHANCEMENT
1 GATE 3 SOURCE
1 2 3 4
CASE 318E–04, STYLE 3 SOT–223 (TO–261AA)
MAXIMUM RATINGS
Rating Drain – to–Source Voltage Gate–to–Source Voltage — Continuous Drain Current — Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VDSS VGS ID PD 0.8 6.4 TJ, Tstg – 65 to +150 Watts mW/°C °C Value 200 ±20 250 Unit Volts Volts mAdc
DEVICE MARKING
MT108
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient (1) Maximum Temperature for Soldering Purposes Maximum Time in Solder Bath RθJA TL 156 260 10 °C/W °C Sec
1.
MMFT108T1 Datasheet
