MMFT960T1 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT960T1/D Medium Power Field Effect Transistor N- Channel Enhancement- Mode Silicon Gate TMOS SOT- 223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as switching regulators, dc- dc converters, solenoid and relay drivers. The device is housed in the SOT- 223 package which is designed for medium power surface mount applications. - Silicon Gate for Fast Switching Speeds - RDS(on) = 1.7 Ohm Max - Low Drive Requirement - The SOT- 223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering eliminating the possibility of damage to the die. - Available in 12 mm Tape and Reel Use MMFT960T1 to order the 7 inch/1000 unit reel Use MMFT960T3 to order the 13 inch/4000 unit reel 1 GATE 3 SOURCE 2,4 DRAIN Motorola Preferred Device MEDIUM POWER TMOS FET 300 m A 60 VOLTS RDS(on) = 1.7 OHM MAX ® 4 1 2 3 CASE 318E- 04, STYLE 3 TO- 261AA MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain- to- Source Voltage Gate- to- Source Voltage - Non- Repetitive Drain Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Operating and Storage Temperature Range Symbol VDS VGS ID PD TJ, Tstg Value 60 ± 30 300 0.8 6.4 - 65 to 150 Unit Volts Volts m Adc Watts m W/°C °C DEVICE MARKING FT960 THERMAL CHARACTERISTICS Thermal Resistance - Junction- to- Ambient Maximum Temperature for Soldering Purposes Time in Solder Bath RθJA TL 156 260 10 °C/W °C Sec 1. Device mounted on a FR- 4 glass epoxy printed circuit board using minimum remended footprint. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist pany Preferred devices are Motorola remended choices for future use and best overall value. REV 3 Motorola Small- Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997 ELECTRICAL CHARACTERISTICS (TA = 25°C unless...