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MRF377 - RF POWER FIELD EFFECT TRANSISTOR

General Description

Ferrite Beads, Surface Mount, 11 Ω (0805) 0.8 1GHz Xinger Balun 33 pF Chip Capacitor (0805) 2.7 pF Chip Capacitor (0603) 12 pF Chip Capacitor (0805) 6.8 pF Chip Capacitors (0805) 2.7 pF Chip Capacitor (0805) 3.3 pF Chip Capacitors (0805) 2.2 µF, 50 V Chip Capacitors 0.01 µF, 100 V Chip Capac

Key Features

  • urce Ω 4.66.
  • j5.90 4.38.
  • j5.64 3.93.
  • j5.33 Zload Ω 8.59.
  • j4.22 9.36.
  • j4.95 9.39.
  • j6.06 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Device Under Test Output Matching Network Input Matching Network + - Z source Z + load Figure 7. 845.
  • 875 MHz Narrowband Series Equivalent Input and Output Impedance ww.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF377/D The RF MOSFET Line RF Power Field-Effect Transistor Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large–signal, common source amplifier applications in 32 volt digital television transmitter equipment. • Typical Broadband DVBT OFDM Performance @ 470–860 MHz, 32 Volts, IDQ = 2.0 A, 8K Mode, 64 QAM Output Power — 45 Watts Avg. Power Gain ≥ 16.7 dB Efficiency ≥ 21% ACPR ≤ –58 dBc • Typical Broadband ATSC 8VSB Performance @ 470–860 MHz, 32 Volts, IDQ = 2.0 A Output Power — 80 Watts Avg. Power Gain ≥ 16.5 dB Efficiency ≥ 27.5% IMD ≤ –31.