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MRF5P21240R6 - RF POWER FIELD EFFECT TRANSISTOR

Description

Short Ferrite Beads 18 pF Chip Capacitors 6.8 pF Chip Capacitors 0.1 µF Chip Capacitors 1000 pF Chip Capacitors 4.7 µF Tantalum Capacitors 10 µF Electrolytic Capacitors 22 µF Tantalum Capacitors 100 µF Electrolytic Capacitors 1.0 kW, 1/8 W Chip Resistors 10 W, 1/8 W Chip Resistors Value, P/N or DWG

Features

  • ncy versus Output Power 100 10.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5P21240/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. • Typical 2–carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 2 x 1100 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 – 5 MHz and f2 + 5 MHz. Distortion Products Measured over a 3.84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz, Each Carrier Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Output Power — 52 Watts Avg.
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