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MTB36N06E TMOS POWER FET

MTB36N06E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB36N06E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount De.

MTB36N06E Features

* present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power elect

MTB36N06E Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced TMOS E
* FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain
* to
* source diode with a

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Datasheet Details

Part number
MTB36N06E
Manufacturer
Motorola
File Size
278.34 KB
Datasheet
MTB36N06E_Motorola.pdf
Description
TMOS POWER FET

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TMOS POWER FET Motorola
Motorola MTB36N06E-like datasheet