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Motorola Electronic Components Datasheet

MTB36N06E Datasheet

TMOS POWER FET

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MTB36N06E/D
Designer's Data Sheet
TMOS E-FET.
High Energy Power FET
D2PAK for Surface Mount
N–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a larger die
than any existing surface mount package which allows it to be used
in applications that require the use of surface mount components
with higher power and lower RDS(on) capabilities. This advanced
TMOS E–FET is designed to withstand high energy in the
avalanche and commutation modes. The new energy efficient
design also offers a drain–to–source diode with a fast recovery
time. Designed for low voltage, high speed switching applications in
power supplies, converters and PWM motor controls, these
devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional safety margin against unexpected voltage transients.
D
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
G
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured — Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number
®
S
MTB36N06E
Motorola Preferred Device
TMOS POWER FET
36 AMPERES
60 VOLTS
RDS(on) = 0.04 OHM
CASE 418B–02, Style 2
D2PAK
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS 60 Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR 60 Vdc
Gate–to–Source Voltage — Continuous
VGS
± 20 Vdc
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp 10 µs)
ID 36 Amps
ID 22
IDM 144 Apk
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TA = 25°C, when mounted with the minimum recommended pad size
PD 100 Watts
0.80 W/°C
2.5 Watts
Operating and Storage Temperature Range
TJ, Tstg – 55 to 150 °C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vpk, IL = 36 Apk, L = 0.34 mH, RG = 25 )
EAS 220 mJ
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient, when mounted with the minimum recommended pad size
RθJC
RθJA
RθJA
1.25 °C/W
62.5
50
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 10 seconds
TL 260 °C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMoottoororolal,aInTc.M19O9S4 Power MOSFET Transistor Device Data
1


Motorola Electronic Components Datasheet

MTB36N06E Datasheet

TMOS POWER FET

No Preview Available !

MTB36N06E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60 — — Vdc
— 61 — mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current–Forward
(Vgsf = 20 Vdc, VDS = 0)
IDSS
µAdc
— — 10
— — 100
IGSSF — — 100 nAdc
Gate–Body Leakage Current–Reverse
(Vgsr = 20 Vdc, VDS = 0)
IGSSR — — 100 nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
VGS(th)
2.0 2.8 4.0 Vdc
— 6.5 — mV/°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 18 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 36 Adc)
(ID = 18 Adc, TJ = 125°C)
Forward Transconductance (VDS = 8.0 Vdc, ID = 18 Adc)
RDS(on)
VDS(on)
gFS
— 0.034 0.04 Ohm
Vdc
— 1.33 1.75
— 1.00 1.44
8.0 —
— mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
1300
2000
pF
— 600 850
— 150 350
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(See Figure 8)
(VDD = 30 Vdc, ID = 36 Adc,
VGS = 10 Vdc,
RG = 10 )
(VDS = 48 Vdc, ID = 36 Adc,
VGS = 10 Vdc)
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
— 18 36 ns
— 100 200
— 45 90
— 50 100
— 38 47 nC
— 10 —
— 15 —
— 14 —
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 36 Adc, VGS = 0 Vdc)
(IS = 36 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
Vdc
— 1.5 2.0
— 1.25 —
Reverse Recovery Time
(See Figure 14)
Reverse Recovery Stored Charge
(IS = 36 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
trr
QRR
— 110 —
ns
— 230 — nC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the tab to center of die)
LD — 3.5 — nH
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
LS
— 7.5 — nH
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
2 Motorola TMOS Power MOSFET Transistor Device Data


Part Number MTB36N06E
Description TMOS POWER FET
Maker Motorola
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