* Avalanche Energy Specified
* IDSS and VDS(on) Specified at Elevated Temperature
* AEC
* Q101 Qualified and PPAP Capable
* MTBV30P06V
* These Devices are Pb
* Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating
MTB30P06V Datasheet (159.52 KB)
MTB30P06V
159.52 KB
Power mosfet.
MTB30P06V, MTBV30P06V
Power MOSFET 30 Amps, 60 Volts
P
*Channel D2PAK
This Power MOSFET is designed to withstand high energy in the avalanche .
📁 Related Datasheet
MTB30P06V TMOS POWER FET (Motorola)
MTB30N06EL TMOS Power FET (Motorola Semiconductor)
MTB30N06ELT4 TMOS Power FET (Motorola Semiconductor)
MTB30N06VL TMOS POWER FET (Motorola)
MTB30N06VL Power MOSFET (ON Semiconductor)
MTB33N10E TMOS POWER FET (Motorola)
MTB35N04J3 N -Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB35N04J3 N -Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB36N06E TMOS POWER FET (Motorola)
MTB36N06V TMOS POWER FET (Motorola)
