MTB3N120E Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N120E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Designer's Motorola Preferred Device N- Channel Enhancement- Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount ponents with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage- blocking capability without degrading performance over time. In addition, this advanced TMOS E- FET is designed to withstand high energy in the avalanche and mutation modes. This new energy efficient design also offers a drain- to- source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM ® - Avalanche Energy Capability Specified at Elevated Temperature S - Low Stored Gate Charge for Efficient Switching - Internal Source- to- Drain Diode Designed to Replace External Zener Transient Suppressor Absorbs High Energy in the Avalanche Mode - Source- to- Drain Diode Recovery time parable to Discrete Fast Recovery Diode - See App. Note AN1327 - Very Wide Input Voltage Range; Off- line Flyback Switching Power Supply MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain- Source Voltage Drain- Gate Voltage (RGS = 1.0 MΩ) Gate- Source Voltage - Continuous Gate- Source Voltage - Non- Repetitive (tp ≤ 10 ms) Drain Current - Continuous @ 25°C Drain Current - Continuous @ 100°C Drain Current - Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ TC = 25°C Derate above 25°C...