900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Motorola Electronic Components Datasheet

MTB3N120E Datasheet

TMOS POWER FET

No Preview Available !

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTB3N120E/D
Designer's Data Sheet
TMOS E-FET.
High Energy Power FET
MTB3N120E
Motorola Preferred Device
D2PAK for Surface Mount
N–Channel Enhancement–Mode Silicon Gate
TMOS POWER FET
3.0 AMPERES
The D2PAK package has the capability of housing a larger die
than any existing surface mount package which allows it to be used
1200 VOLTS
RDS(on) = 5.0 OHM
in applications that require the use of surface mount components
with higher power and lower RDS(on) capabilities. This high voltage
MOSFET uses an advanced termination scheme to provide
enhanced voltage–blocking capability without degrading perfor-
®
mance over time. In addition, this advanced TMOS E–FET is
designed to withstand high energy in the avalanche and commuta-
tion modes. This new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for low
D
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Avalanche Energy Capability Specified at Elevated Temperature
Low Stored Gate Charge for Efficient Switching
G
CASE 418B–02, Style 2
D2PAK
S
Internal Source–to–Drain Diode Designed to Replace External Zener Transient Suppressor Absorbs High Energy in the
Avalanche Mode
Source–to–Drain Diode Recovery time Comparable to Discrete Fast Recovery Diode
* See App. Note AN1327 – Very Wide Input Voltage Range; Off–line Flyback Switching Power Supply
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 M)
Gate–Source Voltage — Continuous
Gate–Source Voltage — Non–Repetitive (tp 10 ms)
Drain Current — Continuous @ 25°C
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp 10 µs)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (1)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, PEAK IL = 4.5 Apk, L = 10 mH, RG = 25 )
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (1)
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 10 seconds
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
E–FET and Designer’s are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
RθJC
RθJA
RθJA
TL
Value
1200
1200
± 20
± 40
3.0
2.2
11
125
1.0
2.5
– 55 to 150
101
1.0
62.5
50
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
Watts
°C
mJ
°C/W
°C
Motorola TMOS Power MOSFET Transistor Device Data
© Motorola, Inc. 1995
1


Motorola Electronic Components Datasheet

MTB3N120E Datasheet

TMOS POWER FET

No Preview Available !

MTB3N120E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 1200 Vdc, VGS = 0 Vdc)
(VDS = 1200 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 1.5 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 3.0 Adc)
(ID = 1.5 Adc, TJ = 125°C)
Forward Transconductance (VDS = 15 Vdc, ID = 1.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(VDD = 600 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc,
RG = 9.1 )
(VDS = 600 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(IS = 3.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
LD
LS
Min
1200
2.0
2.5
Typ
1.28
3.0
7.1
4.0
3.1
2130
1710
932
13.6
12.6
35.8
20.7
31
8.0
11
14
0.80
0.65
394
118
276
2.11
4.5
7.5
Max Unit
— Vdc
— mV/°C
µAdc
10
100
100 nAdc
4.0 Vdc
— mV/°C
5.0 Ohm
Vdc
18.0
15.8
— mhos
2980
2390
1860
pF
30 ns
30
70
40
40 nC
Vdc
1.0
— ns
µC
— nH
2 Motorola TMOS Power MOSFET Transistor Device Data


Part Number MTB3N120E
Description TMOS POWER FET
Maker Motorola
PDF Download

MTB3N120E Datasheet PDF






Similar Datasheet

1 MTB3N120E TMOS POWER FET
Motorola





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy