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MTD6N10E - TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM

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Features

  • is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 800 VDS = 0 V C,.

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Datasheet Details

Part number MTD6N10E
Manufacturer Motorola
File Size 170.89 KB
Description TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM
Datasheet download datasheet MTD6N10E Datasheet
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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA www.DataSheet4U.com Order this document by MTD6N10E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
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