MTD6N10E Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA .. Order this document by MTD6N10E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mount N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time.