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MTD6N10E - TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM

MTD6N10E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA www.DataSheet4U.com Order this document by MTD6N10E/D Designer's TMOS E-FET .™ Power Field Effect Transisto.

MTD6N10E Features

* is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing redu

MTD6N10E Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

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Datasheet Details

Part number
MTD6N10E
Manufacturer
Motorola
File Size
170.89 KB
Datasheet
MTD6N10E_Motorola.pdf
Description
TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM

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TMOS POWER FET 6.0 AMPERES 100 VOLTS RDSon 0.400 OHM Motorola
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