Datasheet4U.com

MTD6N10E Datasheet TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM

Manufacturer: Motorola Semiconductor (now NXP Semiconductors)

📥 Download Datasheet

MTD6N10E tmos power fet 6.0 amperes 100 volts rds(on) = 0.400 ohm by Motorola Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MTD6N10E
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	170.89 KB
Description	TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM
Download	MTD6N10E Download (PDF)

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA www.DataSheet4U.com Order this document by MTD6N10E/D Designer's TMOS E-FET .

Key Features

is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 800 VDS = 0 V C,.

More Datasheets from Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
MTD6N10	TMOS POWER FET 6 AMPERES RDS(on) = 0.25 OHM 80 and 100 VOLTS
MTD6N15	Power MOSFET
MTD6N20E	Power MOSFET
MTD6P10E	TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM
MTD10N05E	TMOS4 POWER FET
MTD12N06EZL	High Energy Power FET DPAK
MTD1302	TMOS POWER FET
MTD15N06V	TMOS POWER FET
MTD15N06VL	TMOS POWER FET
MTD1N40	POWER FIELD EFFECT TRANSISTOR