| Part number | MTD6N10E |
|---|---|
| Datasheet | MTD6N10E_Motorola.pdf |
| File Size | 170.89 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA .. Order this document by MTD6N10E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mount N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time.
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTD6N10 | TMOS POWER FET 6 AMPERES RDS(on) = 0.25 OHM 80 and 100 VOLTS |
| MTD6N15 | Power MOSFET |
| MTD6N20E | Power MOSFET |
| MTD6P10E | TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM |
| MTD10N05E | TMOS4 POWER FET |
| MTD12N06EZL | High Energy Power FET DPAK |
| MTD1302 | TMOS POWER FET |
| MTD15N06V | TMOS POWER FET |
| MTD15N06VL | TMOS POWER FET |
| MTD1N40 | POWER FIELD EFFECT TRANSISTOR |
