MTD6N20E Datasheet - ON Semiconductor

MTD6N20E Power MOSFET

www.DataSheet4U.com MTD6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where .

MTD6N20E Features

* http://onsemi.com 6 AMPERES, 200 VOLTS RDS(on) = 460 mW N

* Channel D

* Avalanche Energy Specified

* Source

* to

* Drain Diode Recovery Time Comparable to a

* Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuit

MTD6N20E_ON Semiconductor.pdf

MTD6N20E Datasheet Preview — Preview of MTD6N20E PDF

Datasheet Details

Part number:

MTD6N20E

Manufacturer:

ON Semiconductor ↗

File Size:

114.11 KB

Description:

Power mosfet.

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