MTD6N20E Datasheet (ON Semiconductor)

MTD6N20E, Power MOSFET

www.DataSheet4U.com MTD6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.

The new energy efficient design also offers a drain to source diode with a fast recovery time.

Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where

MTD6N20E Features

* http://onsemi.com 6 AMPERES, 200 VOLTS RDS(on) = 460 mW N

* Channel D

* Avalanche Energy Specified

* Source

* to

* Drain Diode Recovery Time Comparable to a

* Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuit