MTD6P10E Datasheet - ON Semiconductor

MTD6P10E Power MOSFET

MTD6P10E Preferred Device Power MOSFET 6 Amps, 100 Volts P Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe op.

MTD6P10E Features

* Avalanche Energy Specified

* Source

* to

* Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

* Diode is Characterized for Use in Bridge Circuits

* IDSS and VDS(on) Specified at Elevated Temperature

* Pb

* Free Packages

MTD6P10E-ONSemiconductor.pdf