* Avalanche Energy Specified
* Source
* to
* Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
* Diode is Characterized for Use in Bridge Circuits
* IDSS and VDS(on) Specified at Elevated Temperature
* Pb
* Free Packages
MTD6P10E Datasheet (202.64 KB)
MTD6P10E
202.64 KB
Power mosfet.
MTD6P10E Preferred Device Power MOSFET 6 Amps, 100 Volts P Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanch.
📁 Related Datasheet
MTD6P10E TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM (Motorola)
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