MTD6N15 Datasheet (ON Semiconductor) - Power Field Effect Transistor

MTD6N15, Power Field Effect Transistor

www.DataSheet4U.com MTD6N15 Power Field Effect Transistor DPAK for Surface Mount N Channel Enhancement Mode Silicon Gate This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.

Silicon Gate for Fast Switching Speeds Low RDS(on) 0.3 Ω Max Rugged SOA is Power Dissipation Limited Source to Drain Diode Charact

MTD6N15 Features

* RINT

* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm Ǔ ǒinches

* For additional information on our Pb

* Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://ons