MTD6N10E Datasheet - Motorola

MTD6N10E TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA www.DataSheet4U.com Order this document by MTD6N10E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mount N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching a.

MTD6N10E Features

* is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing redu

MTD6N10E Datasheet (170.89 KB)