MTD6N10E TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA www.DataSheet4U.com Order this document by MTD6N10E/D Designer's TMOS E-FET .™ Power Field Effect Transisto.

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Datasheet Specifications

Part number: MTD6N10E
Manufacturer: Motorola
File Size: 170.89 KB
Datasheet: MTD6N10E_Motorola.pdf
Description: TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM

Features

* is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing redu

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

MTD6N10E Distributors

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MTD6N10E TMOS POWER FET 6.0 AMPERES 100 VOLTS RDSon 0.400 OHM Motorola

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