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MTD6N15 Power MOSFET

MTD6N15 Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA www.DataSheet4U.com Order this document by MTD6N15/D Designer's Power Field Effect Transistor DPAK for Surf.

MTD6N15 Features

* Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows

MTD6N15 Applications

* such as switching regulators, converters, solenoid and relay drivers. Silicon Gate for Fast Switching Speeds Low RDS(on)
* 0.3 Ω Max Rugged
* SOA is Power Dissipation Limited Source
* to
* Drain Diode Characterized for Use With Inductive Loads
* Low Drive Requirem

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Datasheet Details

Part number
MTD6N15
Manufacturer
Motorola
File Size
180.43 KB
Datasheet
MTD6N15_Motorola.pdf
Description
Power MOSFET

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Power MOSFET Motorola
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