Datasheet Specifications
- Part number
- MTD6N20E
- Manufacturer
- Motorola
- File Size
- 210.13 KB
- Datasheet
- MTD6N20E_Motorola.pdf
- Description
- Power MOSFET
Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA www.DataSheet4U.com Order this document by MTD6N20E/D Designer's TMOS E-FET .™ Power Field Effect Transisto.
Features
* and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing rApplications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.MTD6N20E Distributors
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