Datasheet4U Logo Datasheet4U.com

MTD6N20E Datasheet - Motorola

MTD6N20E_Motorola.pdf

Preview of MTD6N20E PDF
MTD6N20E Datasheet Preview Page 2 MTD6N20E Datasheet Preview Page 3

Datasheet Details

Part number:

MTD6N20E

Manufacturer:

Motorola

File Size:

210.13 KB

Description:

Power mosfet.

MTD6N20E, Power MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA www.DataSheet4U.com Order this document by MTD6N20E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mount N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes.

The new energy efficient design also offers a drain to source diode with a fast recovery time.

Designed for low voltage, high speed switching a

MTD6N20E Features

* and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing r

📁 Related Datasheet

📌 All Tags

Motorola MTD6N20E-like datasheet