Part number:
MTD6N20E
Manufacturer:
Motorola
File Size:
210.13 KB
Description:
Power mosfet.
Datasheet Details
Part number:
MTD6N20E
Manufacturer:
Motorola
File Size:
210.13 KB
Description:
Power mosfet.
MTD6N20E, Power MOSFET
MOTOROLA SEMICONDUCTOR TECHNICAL DATA www.DataSheet4U.com Order this document by MTD6N20E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mount N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain to source diode with a fast recovery time.
Designed for low voltage, high speed switching a
MTD6N20E Features
* and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing r
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